PART |
Description |
Maker |
MRF544 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
MS1251 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
2N2857 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
MRF517 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
MRF5812G MRF5812 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
2N5031 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
2N5031 MSC1303 |
From old datasheet system RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
MRF914 MSC1325 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS From old datasheet system
|
Microsemi Corporation
|
MRF545 MSC1315 |
From old datasheet system RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp. NEC, Corp.
|